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  unisonic technologies co., ltd UT9971P power m o sfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r502-764.b 5.0a, 60v n-channel power mosfet ? descripti on t he u t c ut 9971p is a n n- chan ne l en ha nceme n t mode po w e r mosf et providing customers w i t h hi gh s w itc h i n g spee d, cost-effectiven ess and minimum on-s t ate resistance. ? features * r ds (on) < 5 0 m ? @v gs = 1 0 v * high s w itc h in g spee d * halogen free ? symbol g (1) d (2) s (3) ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 UT9971Pl-aa3-r UT9971Pg-aa3-r sot-223 g d s tape reel note: pin assignment: g: gate d: drain s: source ? mar k ing i n formati o n package marking sot-223 http://
UT9971P power m o sfet unisonic technologi es co., ltd 2 of 4 w w w . uniso nic.co m.t w q w - r 50 2- 764 . b ? absolute maxi mu m ra ting s paramet er symbol rat i ngs unit drain-source voltage v dss 60 v gate-source voltage v gss 25 v drain current contin uo us t a = 25c i d 5 a pulsed i dm 20 a power dissipation (t a =25c) p d 2.7 w junction temperature t j -55~+150 c storage temperature range t stg -55~+150 c note: absol u te maxim u m rati ngs are thos e values be yo nd w h ich th e devi c e coul d be p e rmanentl y dam age d. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op er atio n is not i m plie d. ? th er mal char ac teri stic s parameter symbol ratings unit junction to ambient (note 3) ja 45 c/w ? electric al ch ara cteri s tic s (t j = 25c, unless oth e r w is e specifi ed) parameter symbol test conditions min typ max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s i d = 250a, v gs =0 v 6 0 v drain-s ource l eaka ge curr en t i ds s v ds = 60v, v gs =0v, t j = 25c 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = + 25v + 100 na reverse v gs = - 25v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d = 250a 1.0 3.0 v static drain-s o urce on-state resistanc e (note 2) r ds (on) v gs = 10v, i d =5 a 5 0 m ? v gs =4.5v, i d =2 .5 a 6 0 m ? f o r w a r d t r anscond uctance g fs v ds = 10v, i d =5 a 7 s dynamic parameters input cap a cita nce c iss v gs =0v, v ds =25v, f=1.0mhz 760 pf output capac itance c oss 188 pf reverse t r ansfer capac itanc e c rs s 35 pf switching parameters t o tal gate charge (note 2) q g v gs =10v, v ds =48v, i d =5a 56 nc gate to source charge q gs 5.5 nc gate to drain charge q gd 8.8 nc turn-on delay time (note 2) t d ( on ) v ds = 30v, i d =1 a, v gs = 10v, r g =3.3 ? , r d =6 ? 40 ns rise t i me t r 40 ns turn-off delay time t d ( off ) 170 ns fall-t i me t f 50 ns source- drain diode ratings and characteristics drain-s ource diod e f o r w ard voltage (n ote 2) v sd i s =5 a, v gs =0 v 1 . 2 v notes: 1. pulse w i dth limite d b y ma x. ju nction temperature. 2. pulse width 300s, duty cycle 2%
UT9971P power m o sfet unisonic technologi es co., ltd 3 of 4 w w w . uniso nic.co m.t w q w - r 50 2- 764 . b ? test circuits and waveforms
UT9971P power m o sfet unisonic technologi es co., ltd 4 of 4 w w w . uniso nic.co m.t w q w - r 50 2- 764 . b ? typical characteristics drain current, i d (a) drain current, i d (a) dr ain-source on-state resistance ch aracte ri sti c s d r ai n cu rre nt , i d (a) d r ai n to so urce vo lt ag e , v ds (v) 0 2 0 0 .05 0 .1 0.15 1 4 0. 25 0 drai n cu rre n t vs. sou r ce to drai n vol t a g e so urce to dr a i n vo lt ag e, v sd (v) drai n cu rre n t, i d (a) 0.2 0 .4 0.6 0 .8 1.2 0 0. 4 0. 8 1. 6 2. 0 0.2 1.2 1.0 5 6 v gs =10v, i d =5a 3 u t c as s u m e s no r e s pons ibility f o r equipm ent f a ilur e s that r e s u lt f r om us ing pr oducts at v a lues that ex ceed, ev en m o m entar i l y, r a te d v a l u es ( s uch as m a x i m u m r a tings , op er ating condition r anges , or othe r par a m eter s ) li s t ed in pr od ucts s p eci f ic a t ions of any and all u t c pr oducts des cr ibed o r contained her ein. u t c pr oducts ar e not de s i gned f or us e in lif e s uppor t appliances , dev ices or s y s t em s w her e m a l f unction of thes e pr odu c t s c a n be r eas onably ex pected to r es ult in per s onal injur y . r e pr oduction in w hole or in pa r t is pr ohibited w i thout the pr i o r w r itten cons e n t of the copyr i gh t ow ner . t he inf o r m ation pr es e n ted in t h is docum ent d oes not f o r m p a r t of any quota t ion or c o ntr a ct, is b e li e v ed to b e accur a te and r eliable and m a y be changed w i thout not i c e.


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